Diffusion of defects in InP studied using quantum well intermixing

The diffusion rate of grown-in defects in InP is studied by determining the flux of defects from a source layer to underlying quantum wells (QWs). The grown-in defects are caused by epitaxial growth at lower than optimal temp eratures, and are located in an upper InP buffer. We study the photolumines cence blueshift of the QWs as a function of the thickness of the buffer and as a function of anneal time. Modeling correlates the intermixing of the q uantum wells to the concentration of defects at the wells. Possible locatio ns of defect sinks and the identity of the grown-in defects are also discus sed. (C) 2000 Published by Elsevier Science Ltd.