Effects of O-2/N2O-plasma treatment on nitride films on strained Si

NH3 plasma grown ultrathin (<75 Angstrom) nitride films on strained Si have been oxidized using O-2- and N2O-plasma. It is observed that the electrica l properties and reliability of metal insulator semiconductor capacitors wi th N2O-plasma treated nitride films are better than those using O-2-plasma treated films. N2O-plasma treatment of nitride films has resulted in a low level of insulator charge density (Q(f)/q, 1.6 x 10(11) cm(-2)), a high bre akdown voltage (similar to 10-11 MV cm), a high charge-to-breakdown value ( Q(BD,) 11.7 C cm(-2)) and low leakage current. (C) 1000 Elsevier Science Lt d. All rights reserved.