Leakage current in PZT films with sputtered RuOx electrodes

We have studied the leakage current in sol-gel PZT capacitors with reactive sputtered RuOx electrodes under different oxygen pal tial pressures during sputtering. The amount of oxygen content in the electrodes has been found to have a significant effect on the leakage current. Considerable decrease of leakage current at lower electric field can he achieved by sputtering at a higher oxygen partial pressure of 20%. Correlation with degradation expe rimental results suggests that the presence of an oxygen deficient layer ne ar the electrode has crucial effect in controlling both the leakage current and degradation. (C) 2000 Elsevier Science Ltd. All rights reserved.