Oxidation of the H-Si(111)-1 x 1 surface: high resolution Si 2p core-levelspectroscopy with synchrotron radiation

Authors
Jolly, F Rochet, F Dufour, G Grupp, C Taleb-Ibrahimi, A
Citation
F. Jolly et al., Oxidation of the H-Si(111)-1 x 1 surface: high resolution Si 2p core-levelspectroscopy with synchrotron radiation, SURF SCI, 463(2), 2000, pp. 102-108
Citations number
18
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
463
Issue
2
Year of publication
2000
Pages
102 - 108
Database
ISI
SICI code
0039-6028(20000901)463:2<102:OOTHX1>2.0.ZU;2-I
Abstract
The room temperature oxidation of H-terminated Si(111) surfaces by activate d oxygen has been investigated using high resolution (70 meV) Si 2p core-le vel spectroscopy with synchrotron radiation. The data are compared with pre vious studies using photoemission spectroscopy and high resolution electron energy loss spectroscopy. The metastability of the oxidized layer formed a t room temperature is also examined. (C) 2000 Elsevier Science B.V. All rig hts reserved.