Knowledge about the role of the glass matrix in thick-film resistors is nec
essary for improvement of their electrical properties for use in high-perfo
rmance components. The influence of glass composition on the microstructure
of ruthenate conductor and resistor parameters has been studied. Additions
of TiO2, GeO2, and TeO2, which in dilute concentrations markedly increase
the resistivity, improve the temperature coefficient cf the resistance and
the voltage stability. The oxide enrichment of the glass film between the c
onducting particles reduces the ruthenium-ion solubility and decreases the
tunneling conductivity between the conductor grains.