HIGH-TEMPERATURE MICROHARDNESS OF EPITAXIAL LAYERS OF QUATERNARY A(III)B(V)-BASED SOLID-SOLUTIONS

The effect of composition on microhardness and ray length of dislocati on rosettes formed around indentations was studied in quaternary solid solutions In1-xGaxAsyP1-y, Ga1-xAlxAsySb1-y, and Ga1-xInxAsySb1-y. In all these solid solutions, microhardness increases with an increase i n x from 0 to 0.5; the higher the temperature, the smaller the effect. The nature of a solid solution produces a considerable effect on the shape of dislocation rosettes formed around the indentations. The ray length of dislocation rosettes decreases with increasing x, the effect being more pronounced at higher test temperatures. Both microhardness and the ray length are nonmonotonic functions of temperature.