High volume RF/microwave SOI-CMOS integrated circuits

Authors
Auberton-Herve, AJ Barge, T Maleville, C Wittkower, A
Citation
Aj. Auberton-herve et al., High volume RF/microwave SOI-CMOS integrated circuits, ANALOG IN C, 25(2), 2000, pp. 85-91
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
ISSN journal
09251030 → ACNP
Volume
25
Issue
2
Year of publication
2000
Pages
85 - 91
Database
ISI
SICI code
0925-1030(200011)25:2<85:HVRSIC>2.0.ZU;2-Z
Abstract
Building RF/microwave SOI-CMOS integrated circuits has significant speed an d power advantages over circuits built on bulk materials. High quality SOI material exists today which will meet today's device requirements; on-going development efforts will improve the material available for subsequent dev ice generations.