Accurate characterization of silicon-on-insulator MOSFETs for the design of low-voltage, low-power RF integrated circuits

The maturation of low cost Silicon-on-Insulator (SOI) MOSFET technology in the microwave domain has brought about a need to develop specific character ization techniques. An original scheme is presented, which, by combining ca reful design of probing and calibration structures, rigorous in-situ calibr ation, and a new powerful direct extraction method, allows reliable identif ication of the parameters of the non-quasi-static small-signal model and th e high-frequency noise parameters for MOSFETs. The extracted model is shown to be valid up to 40 GHz.