A new approach for SOI devices small-signal parameters extraction

SOI devices are frequently used nowadays in the RF and HF field. Design of complex SOI integrated circuits involves a prior detailed analog simulation , that can only be performed through accurate SOI active components models. We are interested here in linear operation modeling; we test new methods f or small-signal parameters determination, suitable for a conventional MOSFE T high-frequency model and somewhat inspired from methods applied to MESFET technology. In this paper, we deal mainly with extrinsic parameters, for w hich we obtain reliable estimation on a large frequency range. Our finally adopted extraction procedure takes closely into account the model topology, which reflects the device electrical behavior. We completely describe the procedure, from measurements to the extracted equivalent circuit simulation , without having to optimize parameters and with a straightforward extrinsi c elements extraction.