This paper discusses the design and implementation of a monolithic gate dri
ver for an Insulated Gate Bipolar Transistor (IGBT). The objective is to im
plement a high voltage (25 V) monolithic gate driver with a novel protectio
n circuit in a conventional low-voltage (5 V) high-density (0.8 mu m) BiCMO
S process. Extended drain MOS-FETs are used to implement the high-voltage c
apability in this design.