A 0.8 mu m BiCMOS gate driver for IGBT power switch

Authors
Ramezani, M Salama, CAT
Citation
M. Ramezani et Cat. Salama, A 0.8 mu m BiCMOS gate driver for IGBT power switch, ANALOG IN C, 24(3), 2000, pp. 175-185
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
ISSN journal
09251030 → ACNP
Volume
24
Issue
3
Year of publication
2000
Pages
175 - 185
Database
ISI
SICI code
0925-1030(200009)24:3<175:A0MMBG>2.0.ZU;2-5
Abstract
This paper discusses the design and implementation of a monolithic gate dri ver for an Insulated Gate Bipolar Transistor (IGBT). The objective is to im plement a high voltage (25 V) monolithic gate driver with a novel protectio n circuit in a conventional low-voltage (5 V) high-density (0.8 mu m) BiCMO S process. Extended drain MOS-FETs are used to implement the high-voltage c apability in this design.