CONTACTLESS ELECTROREFLECTANCE STUDY OF A VERTICALLY COUPLED QUANTUM DOT-BASED INAS GAAS LASER STRUCTURE/

Authors
AIGOUY L HOLDEN T POLLAK FH LEDENTSOV NN USTINOV WM KOPEV PS BIMBERG D
Citation
L. Aigouy et al., CONTACTLESS ELECTROREFLECTANCE STUDY OF A VERTICALLY COUPLED QUANTUM DOT-BASED INAS GAAS LASER STRUCTURE/, Applied physics letters, 70(25), 1997, pp. 3329-3331
Citations number
32
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
25
Year of publication
1997
Pages
3329 - 3331
Database
ISI
SICI code
0003-6951(1997)70:25<3329:CESOAV>2.0.ZU;2-1
Abstract
Contactless electroreflectance, at both 300 and 20 K, has been used to investigate a vertically coupled quantum dot (QD)-based InAs/GaAs las er structure. Signals have been observed from all the relevant portion s of the sample including the QDs and wetting layer. The energies of t he QD transitions provide evidence for both lateral as well as vertica l coupling. (C) 1997 American Institute of Physics.