COBALT DOPING IN BATIO3 THIN-FILMS BY 2-TARGET PULSED KRF LASER-ABLATION WITH IN-SITU LASER ANNEALING

Citation
A. Ito et al., COBALT DOPING IN BATIO3 THIN-FILMS BY 2-TARGET PULSED KRF LASER-ABLATION WITH IN-SITU LASER ANNEALING, Applied physics letters, 70(25), 1997, pp. 3338-3340
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
70
Issue
25
Year of publication
1997
Pages
3338 - 3340
Database
ISI
SICI code
0003-6951(1997)70:25<3338:CDIBTB>2.0.ZU;2-I
Abstract
Cobalt doped BaTiO3 thin films have been fabricated using two-target p ulsed laser ablation with in situ laser annealing. KrF laser ablated s imultaneously both BaTiO3 and Co3O4 sintered targets and the cobalt co ncentration could simply be controlled at the concentration range of 0 .08%-5% by adjusting laser fluences, off-axis deposition angles, and l aser-irradiated area for Co ablation. All Co:BaTiO3 films were epitaxi ally grown on MgO(100) substrate. Optical absorption coefficients were measured at visible region of the spectrum with increasing Co dopant concentrations. (C) 1997 American Institute of Physics.