MEASUREMENT OF SINGLE INTERFACE-TRAP CAPTURE CROSS-SECTIONS WITH CHARGE-PUMPING

Authors
SAKS NS
Citation
Ns. Saks, MEASUREMENT OF SINGLE INTERFACE-TRAP CAPTURE CROSS-SECTIONS WITH CHARGE-PUMPING, Applied physics letters, 70(25), 1997, pp. 3380-3382
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
25
Year of publication
1997
Pages
3380 - 3382
Database
ISI
SICI code
0003-6951(1997)70:25<3380:MOSICC>2.0.ZU;2-P
Abstract
A technique has been developed using charge pumping to determine elect ron and hole capture cross sections of individual interface traps in s mall silicon metal-oxide-semiconductor transistors. Values for both cr oss sections are approximate to 10(-16) cm(2) for the particular trap measured. (C) 1997 American Institute of Physics.