GROWTH OF VERTICAL-CAVITY SURFACE-EMITTING LASER STRUCTURES ON GAAS (311)B SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Vertical-cavity surface-emitting laser (VCSEL) structures have been gr own on GaAs (311)B substrates by metalorganic chemical vapor depositio n. C-doped GaAs and AlAs layers with smooth surface morphology and a h ole concentration of 10(18) cm(-3) were obtained by optimizing the gro wth conditions; these conditions contributed to high-quality p-type di stributed Bragg reflectors (DBRs). The devices on the (311)B substrate s exhibited a threshold current of 9.6 mA, voltage of 2.1 V, and maxim um power of 4.1 mW at a 20 mu m phi size; these characteristics are si milar to those obtained on (100) substrates. The polarization was alig ned to [(2) over bar 3 (3) over bar]. (C) 1997 American Institute of P hysics.