We report on the realization of second-order distributed feedback quantum-c
ascade lasers at lambda=9.35 mu m, where the active region consists of GaAs
, AlGaAs, and strained InGaAs grown on GaAs. A metal-stripe surface grating
structure allows a high surface emission efficiency for the TM-polarized l
ight. The emitted power via the surface is in the range of 100 mW and excee
ds the emitted power from one facet. A double-lobed surface-emission far-fi
eld pattern is obtained for the lasing mode. The single-mode emission wavel
ength is continuously tunable by the heat sink temperature. (C) 2000 Americ
an Institute of Physics. [S0003-6951(00)00340-5].