IDEAL ANODIZATION OF SILICON

Silicon has been anodized such that the porous layer is passivated wit h a homogeneous stretching phase by incorporating H2O2 in the anodizat ion mixture. Fourier transform infrared spectroscopy measurements show that the Si-H stretching mode oriented perpendicular to the surface a t similar to 2100 cm(-1) dominates the spectrum with negligible contri bution from the bending modes in the 600-900 cm(-1) region. Material a nalysis using Auger electron spectroscopy shows that the samples have very little impurities, and that the luminescent layer is very thin (5 -10 nm). Scanning electron microscopy shows that the surface is smooth er with features smaller than those of conventional samples. (C) 1997 American Institute of Physics.