Very small temperature-dependent band-gap energy in TlInGaAs/InP double heterostructures grown by gas-source molecular-beam epitaxy

TlInGaAs/InP double heterostructures (DHs) were grown on (100) InP substrat es by gas-source molecular-beam epitaxy. Almost no occurrence of Tl interdi ffusion at the InP/TlInGaAs heterointerface was confirmed. The photolumines cence (PL) intensity for the DH was approximately ten times stronger than t hat of the single heterostructure. The PL peak energy and its variation wit h temperature for the TlInGaAs/InP DH decreased with increasing Tl composit ion. For the DH with a Tl composition of 13%, the PL peak energy varied onl y slightly with temperature (0.03 meV/K). This value corresponds to a wavel ength variation of 0.04 nm/K and is much smaller than that of the lasing wa velength of InGaAsP/InP distributed feedback laser diodes (0.1 nm/K). (C) 2 000 American Institute of Physics. [S0003-6951(00)03140-5].