Lattice location of erbium in high-fluence implanted silicon-germanium: Backscattering/channeling study

Authors
Touboltsev, VS Raisanen, J Johnson, E Johansen, A Sarholt, L
Citation
Vs. Touboltsev et al., Lattice location of erbium in high-fluence implanted silicon-germanium: Backscattering/channeling study, APPL PHYS L, 77(14), 2000, pp. 2154-2155
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
14
Year of publication
2000
Pages
2154 - 2155
Database
ISI
SICI code
0003-6951(20001002)77:14<2154:LLOEIH>2.0.ZU;2-C
Abstract
High-quality crystalline Si0.75Ge0.25 alloy crystals were implanted with 70 keV Er+ ions at 550 degrees C to a fluence of 10(19) m(-2). In situ Ruther ford backscattering/channeling spectrometry with a 500 keV He2+ beam reveal ed Er atoms located on regular lattice sites of the host matrix. Angular sc ans taken around the < 100 >, < 110 >, and < 111 > crystallographic axes sh owed that a considerable fraction of Er atoms occupy tetrahedral interstiti al sites. (C) 2000 American Institute of Physics. [S0003-6951(00)05140-8].