MODELING OF STRESS-INDUCED LEAKAGE CURRENT IN ULTRATHIN OXIDES WITH THE TRAP-ASSISTED TUNNELING MECHANISM

Stress-induced leakage current (SILC) in ultrathin oxide metal-oxide-s emiconductor devices has been quantitatively modeled by the trap-assis ted tunneling mechanism. These results are compared with experimental data on samples with oxide thickness ranging from 40 to 80 Angstrom. T his model accurately describes the electric-field dependence of SILC, and also predicts the increase, then decrease in SILC, with decreasing oxide thickness, which is observed experimentally. (C) 1997 American Institute of Physics.