Photoluminescence properties of GaNP/GaP multiple quantum wells grown by gas source molecular beam epitaxy

GaNxP1-x/GaP multiple quantum wells (MQWs) with various N concentrations an d well thicknesses were grown on (100) GaP substrates by gas source molecul ar beam epitaxy with a radio frequency nitrogen radical beam source. The N concentration and GaNP well thickness were determined by high-resolution x- ray rocking curve measurements and theoretical dynamical simulations. Photo luminescence (PL) measurements show that the PL wavelength of GaNP redshift s and the band edge emission integrated intensity increases with increasing N concentration, up to 2.5%. By using an infinite barrier model and variou s well thicknesses of GaN0.025P0.975/GaP MQWs, a large conduction-band effe ctive mass m(c)*similar to 0.9 m(e) is obtained for the GaN0.025P0.975 allo y, indicating a mixing of Gamma and X wave functions in the conduction band . (C) 2000 American Institute of Physics. [S0003-6951(00)00940-2].