Exciton luminescence linewidth due to correlated compositional fluctuations in group-III nitride quantum wells

Authors
Citation
Vi. Litvinov, Exciton luminescence linewidth due to correlated compositional fluctuations in group-III nitride quantum wells, APPL PHYS L, 77(14), 2000, pp. 2210-2212
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
14
Year of publication
2000
Pages
2210 - 2212
Database
ISI
SICI code
0003-6951(20001002)77:14<2210:ELLDTC>2.0.ZU;2-7
Abstract
The model for finite-range correlated compositional disorder is proposed, a nd the calculation of the energy domain of the exciton localization in allo y quantum well is carried out. The approach suggests an interpolation schem e between an uncorrelated and a finite-range correlated disorder and descri bes experimental data on excitonic pholuminescence in group III-nitride all oy quantum wells. (C) 2000 American Institute of Physics. [S0003-6951(00)04 139-5].