Quantum point contacts fabricated by nanoimprint lithography

The potential of integrating nanoimprint lithography into electronic device fabrication is demonstrated by means of a quantum point contact (QPC). A S i-mold with a split-gate pattern is embossed into a thin polymer film locat ed on top of a modulation-doped GaAs/AlGaAs heterostructure. The split-gate s are fabricated by metal evaporation and lift-off. The gate tip separation ranges from 180 nm to 400 nm. Transport studies performed at a temperature of 4.2 K show conductance quantization with varying gate voltages. (C) 200 0 American Institute of Physics. [S0003-6951(00)04940-8].