CHARACTERIZATION OF INGAN MULTIQUANTUM-WELL STRUCTURES FOR BLUE SEMICONDUCTOR-LASER DIODES

In0.15Ga0.85N/GaN and In0.15Ga0.85N/In0.05Ga0.95N multi quantum well ( MQW) structures grown on (0001) sapphire substrates were investigated by high-resolution x-ray diffraction and cross-sectional transmission electron microscopy. The results show that ultrathin MQWs with fairly good crystallinity and precisely controlled clear parallel interfaces were grown. Laser diode structures with MQWs were also studied, and th e results suggest that these superlattice structures retain their high quality even after being subjected to high temperatures during the su bsequent growth of p-type GaN as the optical guiding layer, p-type GaA lN as the cladding layer, and p-type GaN as the contact layer. (C) 199 7 American Institute of Physics.