PRESSURE AND STRAIN SENSORS BASED ON INTERVALLEY ELECTRON-TRANSFER INALGAAS

Authors
LEE SJ KHURGIN JB WANG KL ALT K EHRLICH MJ WAGNER JW
Citation
Sj. Lee et al., PRESSURE AND STRAIN SENSORS BASED ON INTERVALLEY ELECTRON-TRANSFER INALGAAS, Applied physics letters, 70(25), 1997, pp. 3437-3439
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
25
Year of publication
1997
Pages
3437 - 3439
Database
ISI
SICI code
0003-6951(1997)70:25<3437:PASSBO>2.0.ZU;2-6
Abstract
A novel sensor, based on the intervalley transfer of electrons in AlxG a1-xAs (x similar to 0.3) subjected to hydrostatic pressure and/or str ain is proposed. The operation characteristics are evaluated, optimize d theoretically, and demonstrated experimentally. (C) 1997 American In stitute of Physics.