OPTICAL STUDIES OF GAAS QUANTUM-WELLS STRAINED TO GAP

Quantum wells of GaAs lattice matched to GaP have been studied by phot oluminescence and electroreflectance, The quantum well thickness was v aried between 1 and 6 monolayers in steps of 1 monolayer. Electron-hol e transitions have been observed involving states both in the X band a nd in the Gamma band, which have been modeled using a k.p. model in co njunction with the envelope function approximation, Overall agreement between theory and experiment is found using an unstrained valence ban d offset of 0.6 eV. (C) 1997 American Institute of Physics.