ENHANCED ELECTROOPTIC MODULATION BY INTEGRATION OF NONRADIATIVE CENTERS IN A RESONANT-TUNNELING LIGHT-EMITTING DIODE

Citation
Bw. Alphenaar et al., ENHANCED ELECTROOPTIC MODULATION BY INTEGRATION OF NONRADIATIVE CENTERS IN A RESONANT-TUNNELING LIGHT-EMITTING DIODE, Applied physics letters, 70(25), 1997, pp. 3452-3454
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
70
Issue
25
Year of publication
1997
Pages
3452 - 3454
Database
ISI
SICI code
0003-6951(1997)70:25<3452:EEMBIO>2.0.ZU;2-H
Abstract
We create a reservoir of hole traps in a resonant tunneling light emit ting diode by etching the p-type contact into an array of nanometer sc ale pillars. In the off state, the charge reservoir keeps the light ou tput extremely low? even at relatively high currents. The device can b e switched on to produce light by raising the electron emitter past a confined electron state allowing holes to escape from the nonradiative region. The resulting electro-optic switch has an on/off ratio of at least 1000:1, a large improvement over conventional resonant tunneling light emitting diodes. (C) 1997 American Institute of Physics.