DIRECT-BAND-GAP STRUCTURES ON NANOMETER-SCALE, MICROMACHINED SILICON TIPS

The selective deposition of compound semiconductors on single crystal silicon tip arrays produces optical quality, direct band gap materials on the silicon nanostructures. We demonstrate using the organometalli c vapor phase epitaxy of GaInP that the direct band gap semiconductor nucleates selectively on the silicon tips. The structural properties o f the tips (whose radius of curvature is approximately 10-20 nm) are u naltered by this chemical vapor deposition process. Furthermore, inten se band edge emission from the GaInP is observed with an external elec tron beam or laser stimulation indicating a good crystal quality for t he three dimensional epitaxial structures. (C) 1997 American Institute of Physics.