High-efficiency electronic accommodation of energy of heterogeneous recombination of hydrogen atoms on the surface of the monocrystal ZnS

It has been found, that the rate of accommodation of energy of chemical rea ction of the hydrogen atom's recombination via electronic channel on the su rface of ZnS monocrystal increases by 5 orders of magnitude at the surface illumination by UV Light. The effect is connected with the electronic accom modation of energy of the vibrationally excited molecule H-2(V), formed dur ing the reaction. It is attributed to the electrons of the fine traps and t o the high-speed diffusion along the surface on the diffusion distance of d greater than or equal to 100 Angstrom. (C) 2000 Published by Elsevier Scie nce B.V.