Chemical vapor deposition of gallium sulfide thin films

The compound [Ga(S-i-Pr)(2)(mu-S-i-Pr)](2), a thermally stable solid with a low melting point, was used as a single-source precursor to gallium sulfid e films in a low-pressure chemical vapor deposition process. Film depositio ns were carried out at substrate temperatures in the range 350-610 degrees C. The films were determined to have a Ga2S3 stoichiometry by Rutherford ba ckscattering and energy-dispersive X-ray spectrometries. X-ray diffraction studies showed that the films deposited on glass, silicon, and YSZ (111) su bstrates were composed of gamma-Ga2S3, alpha-Ga2S3, and highly oriented gam ma-Ga2S3, respectively.