Effect of radiation defects on avalanche breakdown volrage at silicon p-n-junctions

Authors
Korshunov, FP Lastovsky, SB
Citation
Fp. Korshunov et Sb. Lastovsky, Effect of radiation defects on avalanche breakdown volrage at silicon p-n-junctions, DAN BELARUS, 43(4), 1999, pp. 44-47
Citations number
11
Categorie Soggetti
Multidisciplinary
Journal title
DOKLADY AKADEMII NAUK BELARUSI
ISSN journal
0002354X → ACNP
Volume
43
Issue
4
Year of publication
1999
Pages
44 - 47
Database
ISI
SICI code
0002-354X(199907/08)43:4<44:EORDOA>2.0.ZU;2-T
Abstract
Irradiation of Silicon p-n-junctions by electrons with energy 4 MeV increas es the avalanche breakdown voltage at room temperature which is caused by d ecrease of concentration gradient of minor impurities as the result of radi ation defects containing basic doping agents.