Thresholdless and hysteretic switching in AFLC cells with polar anchoring

Citation
Nj. Mottram et Sj. Elston, Thresholdless and hysteretic switching in AFLC cells with polar anchoring, FERROELECTR, 246(1-4), 2000, pp. 957-965
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
FERROELECTRICS
ISSN journal
00150193 → ACNP
Volume
246
Issue
1-4
Year of publication
2000
Pages
957 - 965
Database
ISI
SICI code
0015-0193(2000)246:1-4<957:TAHSIA>2.0.ZU;2-U
Abstract
Using a continuum model we have found both thresholdless and hysteretic swi tching in an antiferroelectric liquid crystal cell in which the surfaces in duce polar anchoring. By minimizing the free energy of the system, which in cludes contributions from antiferro- and ferroelectric ordering, electrosta tic and elastic energy, we find three possible zero voltage ground states. Calculating the region of stability of each of these states leads to a phas e diagram for the system. We find that, in certain regions of the phase dia gram, the cell switches hysteretically whilst in others it exhibits thresho ldless switching.