AC floating body effects in partially depleted floating body SOI nMOS operated at elevated temperature: An analog circuit prospective

AC floating body effects in PD SOI nMOSFETs operated at high temperature ar e investigated. Both source/body and drain/body junction diode characterist ics are greatly influenced by temperature, significantly impacting the ac k ink effect as well as low-frequency (LF) noise characteristics. This is esp ecially true for the pre-de kink operation at high temperature. The increas e of junction thermal generation current becomes an important body charging source and induces the LF Lorentzian-like excess noise.