High-frequency characterization of sub-0.25-mu m fully depleted silicon-on-insulator MOSFETs

Authors
Chen, CL Mathews, RH Burns, JA Wyatt, PW Yost, DR Chen, CK Fritze, M Knecht, JM Suntharalingam, V Soares, A Keast, CL
Citation
Cl. Chen et al., High-frequency characterization of sub-0.25-mu m fully depleted silicon-on-insulator MOSFETs, IEEE ELEC D, 21(10), 2000, pp. 497-499
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
21
Issue
10
Year of publication
2000
Pages
497 - 499
Database
ISI
SICI code
0741-3106(200010)21:10<497:HCOSMF>2.0.ZU;2-Y
Abstract
A cutoff frequency, f(T), of 85 GHz was measured on a fully-depleted silico n-on-insulator (FDSOI) n-MOSFET with a gate length of 0.15 mu m. The p-MOSF ET with 0.22-mu m gate length has an f(T) of 42 GHz. The high-frequency equ ivalent circuits were derived from scattering parameters for MOSFETs with v arious gate lengths. The effects of gate Length and other device parameters on the performance of FDSOI MOSFETs at RF are discussed.