Lateral RF SOI power MOSFETs with f(T) of 6.9 GHz

For the first time, lateral RF power MOSFETs have been fabricated in a sili con-on-insulator technology. Fabrication was performed on a 1.2-mu m SOI CM OS logic process using an additional p(-) angle implant. The devices exhibi t a breakdown voltage in excess of 35 V, a unity current gain frequency (f( T)) of 6.9 GHz, a maximum oscillation frequency (f(max)) of 10.1 GHz, a tra nsconductance (g(m)) of 28 mS, and leakage currents of under 10 nA. A class A RF amplifier was also constructed and measured. It yielded an efficiency of 25% (identical to a similarly rated bulk LDMOSFET) with a maximum power output of 0.115 W. The excellent RF performance of these devices, combined with the inherent advantages of SOI CMOS for mixed-signal circuitry, is ve ry promising for future integrated RF power amplifiers.