Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs

A solver for the two-dimensional (2-D) Schrodinger equation based on the k- space representation of the solution has been developed and applied to the simulation of 2-D electrostatic quantum effects in nano-scale MOS transisto rs, This paper presents the mathematical framework of the simulator, addres ses the related accuracy and efficiency problems, and discusses the simulat ions performed to validate it. Furthermore, the 2-D quantum effects observe d in the simulation of charge densities in tens-hundreds nanometer scale MO S structures are described.