Development of global calibration for accurate GaAs-PHEMT simulation

Today's GaAs PHEMTs make it possible to cover applications of an extremely wide frequency range, as high as 100 GHz, with a single device type. In thi s paper, a set of models and calibrations for the predictive device simulat ion of GaAs PHEMTs is developed, The simulation setup includes a descriptio n of the device geometry. In particular, a realistic representation of the region between the ohmic contacts and the channel is included along with th e fitting procedure of the simulation parameters and the necessary transpor t and interface models, In addition, special emphasis has been placed on a simultaneous fitting of currents and capacitances. The resulting setup allo ws to describe different devices without changing any nontechnology depende nt parameters and thus provides a global calibration within a given device family. This capability is demonstrated by comparing the measured and simul ated results of five very different devices which cover gate lengths from 1 20 to 500 nm, transconductances from 100 to 800 mS/mm, and ungated channel lengths from 70 to 600 nm.