A new comprehensive CAD-oriented modeling methodology for single and couple
d interconnects on an Si-SiO2 substrate is presented. The modeling techniqu
e uses a modified quasi-static spectral domain electromagnetic analysis whi
ch takes into account the skin effect in the semiconducting substrate, equi
valent-circuit models with only ideal lumped elements, representing the bro
adband characteristics of the interconnects, are extracted. The response of
the proposed SPICE compatible equivalent-circuit models is shown to be in
good agreement with the frequency-dependent transmission line characteristi
cs of single and general coupled on-chip interconnects.