CAD-oriented equivalent-circuit modeling of on-chip interconnects on lossysilicon substrate

A new comprehensive CAD-oriented modeling methodology for single and couple d interconnects on an Si-SiO2 substrate is presented. The modeling techniqu e uses a modified quasi-static spectral domain electromagnetic analysis whi ch takes into account the skin effect in the semiconducting substrate, equi valent-circuit models with only ideal lumped elements, representing the bro adband characteristics of the interconnects, are extracted. The response of the proposed SPICE compatible equivalent-circuit models is shown to be in good agreement with the frequency-dependent transmission line characteristi cs of single and general coupled on-chip interconnects.