Micro-structure transformation of silicon: A newly developed transformation technology for patterning silicon surfaces using the surface migration ofsilicon atoms by hydrogen annealing
T. Sato et al., Micro-structure transformation of silicon: A newly developed transformation technology for patterning silicon surfaces using the surface migration ofsilicon atoms by hydrogen annealing, JPN J A P 1, 39(9A), 2000, pp. 5033-5038
The micro-structure transformation of silicon (MSTS), which is a transforma
tion technology for patterning silicon surfaces by hydrogen annealing, is p
resented for the first time. The transformation was controlled by the param
eters of annealing pressure as well as annealing time and temperature. Void
s of sub-micrometer regime size can be intentionally formed in the silicon
substrates by making use of transformation. Electrical characteristics, suc
h as the reliability of the thin dielectrics formed in the deep trenches, w
ere improved with the aid of the MSTS process, due to the flattening of the
inside surface of the trenches and the rounding of the corners. The mechan
ism of the transformation by MSTS was studied by means of molecular dynamic
s, which clearly shows the migration of silicon atoms on the surface. MSTS
is a promising technology for the fabrication of future integrated circuits
in silicon.