Reactive ion etching of indium nitride using CH4 and H-2 gases

We have studied the characteristics of reactive ion etching of indium nitri de layers using CH4 and H-2 gases. The effects of CH4/H-2 gas composition. total gas pressure, and plasma power on the etching rates were investigated . It was found that variation of the CH4 concentration in gas mixtures lead s to changes in both the etching rate and the surface morphology. A smooth etched InN surface was obtained in the range of 5-15% CH4 concentration and 25-55 Pa pressure. The etching rate of InN increases from 260 to 1310 Angs trom/min with increasing the plasma power from 100 to 300 W at a 10% CH4 co ncentration and 45 Pa pressure.