Lateral solid-phase recrystallization from the crystal seed selectively formed by excimer laser annealing in Ge-ion-implanted amorphous silicon films

A new recrystallization method improving the electrical properties of polyc rystalline silicon (poly-Si) thin-film transistors (TFTs) and reducing the fluctuation of the electrical characteristics among them is proposed. It ca n he realized by the amorphization of poly-Si films through Ge-ion implanta tion, the crystallization of the drain region, which functions as a crystal seed in the subsequent process, through excimer laser annealing (ELA), and lateral solid-phase recrystallization (LSPR) from the drain to the source along the channel through furnace annealing, In this study, basic experimen ts are performed to determine the optimum condition of ELA for the formatio n of the crystal seed with good crystallinty and to investigate the aspect of LSPR growth from the seed.