Determination of donor densities and donor levels in 3C-SiC grown from Si-2(CH3)(6) using Hall-effect measurements

Without any assumption of the number of types of impurities, the densities and energy levels of donors in undoped 3C-SiC grown from Si-2(CH3)(6) are p recisely determined by the simple graphical method proposed here, using the temperature dependence of the majority-carrier concentration obtained by H all-effect measurements. We detect at least three types of donors whose ene rgy levels (Delta E-D) are 7-14 meV, 46-54 meV and 97-120 meV as measured f rom the conduction band, although it was reported that Delta E-D for nitrog en atoms decreased with an increase in the donor density from similar to 50 meV to similar to 15 meV. In addition to the similar to 15 meV donor that was reported in undoped 3C-SiC grown from a mixture of SiH4 and C3H8, at le ast two donor levels are detected in undoped epilayers grown from Si-2(CH3) (6). From the viewpoints of donor density and compensation ratio, the quali ty of undoped 3C-SiC grown from Si-2(CH3)(6) is better than that of undoped 3C-SiC grown from a mixture of SiH4 and C3H8.