Electrical properties of p- and n-GaSe doped with As and Ge

Hall effect measurements are carried out to study the carrier transport of GaSe doped with amphoteric impurities. The p-and n-type conductions were ob tained for the As- and Ge-doped samples, respectively. The carrier transpor ts in the As- and Ge-doped samples an associated with the deep acceptor lev el at 0.54 eV above the valence band and the deep donor level at 0.58 eV be low the conduction band, respectively.