Study on the optoelectronic properties of Al/a-Si : H/a-As2Se3 photoreceptor for electrophotography

Due to its superior photosensitivity in visible light, amorphous selenium-b ased photoreceptors are widely used on photoreceptor drums in copying machi nes. Hydrogenated amorphous silicon (a-Si:H), which has special homogeniety making it easily deposited on the substrate as well as excellent photosens itivity in visible light, is first applied as a blocking layer on photorece ptors. Because intrinsic a-Si:H film is an n-type semiconductor, this confi guration generates Schottky contact and an np junction at the interfaces wh ich could be regarded as an ideal photodiode. Therefore, we attempted to ad opt a-Si:H thin film as a blocking layer, and combine it with amorphous ars enic selenide (a-As2Se3) to prepare two structures of Al/A/O-2(3)/a-As2Se3 and Al/a-Si:H/a-As2Se3 photoreceptors. Using an electrostatic paper analyze r (model: EPA-8100) to measure the photoinduced discharge curve (PIDC), we discovered that the Al/a-Si:H/a-As2Se3 structure has a high initial surface potential (V-so similar to 214 V; 41.63 V/mu m), excellent photosensitivit y (E-1/2 similar to 2.19 lx.s), a low residual potential (V-r similar to 4V ), and a high contrast voltage ratio (214 V/4 V congruent to 53.5). For a b etter understanding of photoreceptors. we investigated the photosensitivity at different incident wavelengths. the movement of carriers in the photore ceptors and the characteristics of photoreceptors during isothermal anneali ng.