Effect of oxygen on the activation of Mg acceptor in GaN epilayers grown by metalorganic chemical vapor deposition

Authors
Chung, SH Lachab, M Wang, T Lacroix, Y Basak, D Fareed, Q Kawakami, Y Nishino, K Sakai, S
Citation
Sh. Chung et al., Effect of oxygen on the activation of Mg acceptor in GaN epilayers grown by metalorganic chemical vapor deposition, JPN J A P 1, 39(8), 2000, pp. 4749-4750
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
39
Issue
8
Year of publication
2000
Pages
4749 - 4750
Database
ISI
SICI code
Abstract
The effect of oxygen mixed in nitrogen on p-type activation in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition (MOCVD) was inve stigated. The samples annealed in N-2/O-2 (1%) ambient exhibited the best e lectrical properties with respect to hole concentration. SIMS data suggeste d that oxygen reacted with hydrogen present in the Mg-doped GaN samples dur ing the thermal annealing process, thereby enhancing the activation of Mg a ccepters.