Amorphous GaN grown by room temperature molecular beam epitaxy

Amorphous GaN films were grown at room temperature by molecular beam epitax y on the oxide layer of GaAs(001) substrates. Their properties were investi gated by transmission electron microscopy/diffraction and micro-Raman spect roscopy. A broad Raman peak at 650 cm(-1) identifies the amorphous GaN. The results suggest that the local short-range bonding structure in amorphous GaN is different from crystalline GaN supporting theoretical predictions [S tumm and Drabold: Phys. Rev. Lett. 79 (1997) 677] that amorphous GaN is att ractive for device applications.