A 25-nm-long channel metal-gate p-type Schottky source/drain metal-oxide-semiconductor field effect transistor on separation-by-implanted-oxygen substrate

A 25-nm-long channel metal-gate PtSi Schottky source/drain metal-oxide-semi conductor field effect transistor (MOSFET) fabricated on a separation-by-im planted-oxygen (SIMOX) substrate was demonstrated. The drain current and tr ansconductance were 293 mu A/mu m and 431 mS/mm, respectively.