Dielectric investigation of BaTiO3 thin-film capacitor

The dielectric properties of BaTiO3 thin film were investigated on a highly c-axis-oriented epitaxial thin crystal. It was confirmed by X-ray diffract ion that the film thickness was 120 Angstrom and that it was high-quality s ingle-crystal film. The spread of crystal orientation of the BgTiO(3) thin film was the same as that of SrTiO3 substrate. However, the dielectric prop erties of this thin film were different from those of the BaTiO3 bulk cryst als and were explained by the space-charge effect. The space-charge polariz ation of this film strongly depends on temperature and this behavior was ob served after the incubation time had passed. The experimental results are d iscussed in terms of the interaction between the polarities of domain and s pace charges.