Influence of reactive ion etching applied to Si substrate on epitaxial Si growth and its removal

The effects of post-etching treatments on Si selective epitaxial growth (SE G) have been studied. In the case of O-2 downflow treatment, SEG Si had dis locations and a rough surface. It was found that this abnormal growth was c aused by SiO2 formed by the post-etching treatment which could not be remov ed by diluted hydrogen fluoride (DHF) treatment prior to the SEG process. T his SiO2 was not removed due to the existence of carbon at the Si/SiO2 inte rface which had been implanted by reactive ion etching (RIE). In the case o f O-2 plasma treatment, there was no carbon at the Si/SiO2 interface, SiO2 was completely removed by DHF, and SEG Si was grown successfully. In conclu sion, a new, low-temperature Si surface removal method with precise etching depth control using O-2 plasma treatment followed by DHF treatment is demo nstrated to be an effective pretreatment for Si SEG.