Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations

We have developed a phenomenological theory of growth behavior in semicondu ctor heteroepitaxy that includes the effects of the formation of Stranski-K rastanov (SK) islands and misfit-dislocations (MDs). Our theory can reprodu ce the various types of growth behavior observed in hereroepitaxial growth. Moreover, we also formulate a procedure for determining the phenomenologic al parameters that includes atomistic calculations. The critical thickness of InAs/GaAs(110) obtained by this procedure is in good agreement with the experimentally obtained value.