High f(T) 50-nm-gate InAlAs/InGaAs high electron mobility transistors lattice-matched to InP substrates

We fabricated 50-nm-gate InAlAs/InGaAs high electron mobility transistors ( HEMTs) lattice-matched to InP substrates using a conventional process under low temperatures below 300 degrees C, and measured DC and RF performance. nle measured cutoff frequency f(T) of our 50-nm-gate HEMT is 362 GHz, which is the highest value ever reported for any transistor, and is much higher than the values reported for previous 50-nm-gate lattice-matched HEMTs. The excellent RF performance of our HEMTs might result from the low-temperatur e fabrication process.